FLM1011-3F DATASHT(color)

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FLM1011-3F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 35.0dBm (Typ.)
High Gain: G1dB = 7.5dB (Typ.)
High PAE: ηadd = 29% (Typ.)
Low IM3 = [email protected] = 24.0dBm
Broad Band: 10.7 ~ 11.7GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1011-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
25.0
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
1400
2100
mA
Transconductance
gm
VDS = 5V, IDS = 900mA
-
1300
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 70mA
-0.5
-1.5
-3.0
V
IGS = -70µA
-5.0
-
-
V
34.0
35.0
-
dBm
6.5
7.5
-
dB
-
900
1100
mA
-
29
-
%
-
-
±0.6
dB
-44
-46
-
dBc
-
5.0
6.0
°C/W
-
-
66
°C
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-Added Efficiency
Idsr
ηadd
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
Thermal Resistance
Rth
Channel Temperature Rise
∆Tch
VDS = 10V,
IDS = 0.6 IDSS(Typ.),
f = 10.7 ~ 11.7 GHz,
ZS = ZL = 50Ω
f = 11.7GHz, ∆f = 10MHz
2-Tone Test
Pout = 24.0dBm S.C.L.
Channel to Case
10V x Idsr x Rth
CASE STYLE: IA
Edition 1.4
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM1011-3F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
31
24
18
12
6
0
50
100
150
VDS=10V
f1 = 11.7 GHz
f2 = 11.71 GHz
2-tone test
27
-15
Pout
25
-25
-35
23
IM3
200
21
-45
19
-55
Case Temperature (°C)
12
14
16
18
20
22
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
36
Output Power (dBm)
36
Pin=28dBm
35
26dBm
34
33
24dBm
32
31
22dBm
VDS=10V
f = 11.2 GHz
34
Pout
32
40
30
30
28
20
ηadd
26
10
30
10.7
10.95
11.2
11.45
11.7
19
Frequency (GHz)
21
23
25
27
Input Power (dBm)
2
29
ηadd (%)
VDS=10V
P1dB
Output Power (dBm)
37
OUTPUT POWER vs. INPUT POWER
IM3 (dBc)
29
Output Power (S.C.L.) (dBm)
Total Power Dissipation (W)
30
FLM1011-3F
X, Ku-Band Internally Matched FET
S11
S22
0.2
+j100
+j25
10.7
10.9
10.5 GHz
11.3
+j10
11.1
11.9
20
50Ω
180°
250
10.7
11.7
11.7
11.7
11.1
-j250
10.7
0°
4
10.7
11.1
10.9
-j100
-j50
FREQUENCY
(MHZ)
3
10.5 GHz
10.9
11.3
-j25
2
11.3
11.5
11.9
SCALE FOR |S21|
1
11.5
10.5 GHz
11.5
10.5 GHz
-j10
11.9
11.3
10.9
10
11.9
11.7
11.1
0
0.1
+j250
11.5
S21
S12
+90°
SCALE FOR |S12|
+j50
-90°
S11
S-PARAMETERS
VDS = 10V, IDS = 900mA
S21
S12
MAG
ANG
MAG
ANG
MAG
ANG
S22
MAG
ANG
10500
.606
127.5
2.381
-45.7
.045
-34.6
.500
-144.6
10600
.586
118.0
2.475
-54.3
.047
-47.4
.491
-154.2
10700
.556
107.5
2.574
-63.8
.050
-64.6
.474
-165.0
10800
.532
96.4
2.663
-73.4
.053
-76.4
.466
-175.9
10900
.493
84.3
2.767
-83.3
.058
-98.2
.452
172.4
11000
.457
71.3
2.859
-94.1
.064
-110.4
.442
159.8
11100
.413
55.9
2.929
-105.0
.070
-126.2
.430
146.9
11200
.375
38.7
2.984
-116.4
.075
-137.1
.424
133.6
11300
.333
19.7
2.995
-127.8
.081
-151.9
.411
120.4
11400
.301
-3.4
2.992
-139.6
.086
-164.5
.394
106.6
11500
.291
-28.4
2.935
-151.4
.089
-177.0
.375
92.5
11600
.297
-51.8
2.861
-162.7
.093
171.1
.361
79.1
11700
.320
-74.6
2.776
-173.8
.096
157.2
.341
65.6
11800
.354
-93.8
2.681
175.3
.097
147.3
.320
50.6
11900
.399
-109.4
2.565
164.8
.099
134.2
.305
37.7
3
FLM1011-3F
X, Ku-Band Internally Matched FET
1.5 Min.
(0.059)
Case Style "IA"
Metal-Ceramic Hermetic Package
1
0.1
(0.004)
9.7±0.15
(0.382)
2-R 1.25±0.15
(0.049)
4
2
3
1.8±0.15
(0.071)
1.5 Min.
(0.059)
0.5
(0.020)
3.2 Max.
(0.126)
13.0±0.15
(0.512)
1.15
(0.045)
0.2 Max.
(0.008)
8.1
(0.319)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
16.5±0.15
(0.650)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4

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